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Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors

Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors

By (author): J. J. Liou
Copyright: 1996
Pages: 227
ISBN: 9780890065877

Print Book $99.00 Qty:
The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. The book's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.
Introduction. Abrupt AlGaAs/GaAs HBT. Collector and Base Current in Abrupt HBT. Cutoff Frequency. Avalanche Multiplication Characteristics. Enhanced Structures, Base Grading, Setback Layer, and Graded Layer. Combined Effect of Setback and Graded Layers. Thermal Effect in AlGaAs/GaAs HBT. Self-Heating and Thermal Coupling Effects in Multiple-Emitter Finger HBT. Thermal-Avalanche Interacting Behavior. Base and Collector Leakage Currents. Leakage Currents at the Emitter-Base, Base-Collector, and Collector-Subcollector Peripheries, and the Subcollector-Substrate Interface. Base and Collector Currents Including Normal and Leakage Components. Leakage Current Characteristics in Post-Burn. Noise and High-Frequency Noise Characteristics. Overview of 1/F, Burst, and Shot Noise. Numerical Simulation. Overview of Two-Dimensional Device Simulator MEDICI. Effects of Graded Layer, Setback Layer, and Self-Heating. Effects of Different Base and Collector Structures.
  • J. J. Liou
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