LinkedIn Facebook twitter home page

Advanced Search

Change Location

 
Artech House USA
Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium Heterojunction Bipolar Transistors

By (author)s: John D. Cressler, Guofu Niu
Copyright: 2002
Pages: 589
ISBN: 9781580533614

Artech House is pleased to offer you this title in a special In-Print-Forever® ( IPF® ) hardbound edition. This book is not available from inventory but can be printed at your request and delivered within 2-4 weeks of receipt of order. Please note that because IPF® books are printed on demand, returns cannot be accepted.


Print Book $149.00 Qty:
eBook $131.00 Qty:
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT. Moreover, the book helps you gain a thorough understanding of the subtle optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this technology. The book explains how SiGe HBTs offer the high-performance associated with III-V devices such as GaAs and InP, while preserving the low-cost, high-integration level, high yield, and economy-of-scale benefits of conventional silicon IC manufacturing. You discover why SiGe technology offers a unique solution for 21st century communications IC needs.
Preface.; Introduction - The Magic of Silicon. Integrated Circuit Needs for the 21st Century. Application-Induced Design Constraints. The Dream: Bandgap Engineering in Silicon. The SiGe HBT. A Brief History of SiGe Technology. SiGe HBT Performance Trends. The IC Technology Battleground: Si vs SiGe vs III-V. ; SiGe Strained-Layer Epitaxy - SiGe Alloys. SiGe Growth. Stability Constraints. Band Structure. Transport Parameters. Open Issues.; SiGe HBT BiCMOS Technology - Integration Issues. SiGe HBT Structural Evolution. Profile Control and Design Tradeoffs. Carbon Doping of SiGe HBTs. Reliability Issues. CMOS Integration. Passives. The Bottom Line.; Static Characteristics - Intuitive Picture. Output Conductance. Equivalent Circuit Models. Avalanche Multiplication. Breakdown Voltages. ; Dynamic Characteristics -Intuitive Picture. Charge Modulation Effects. Basic RF Performance Factors. Linear Two-Port Parameters. Stability, MAG, MSG, and Mason 's U. Base and Emitter Transit Times. ECL Gate Delay. Second Order Phenomena - Ge Grading Effects. Neutral Base Recombination. Heterojunction Barrier Effects. ; Noise - Fundamental Noise Characteristics. Linear Noisy Two-port Network Theory. Analytical Modeling. Optimal Sizing and Biasing for LNA Design. SiGe Profile Design Tradeoffs. Low-Frequency Noise. Substrate and Cross-Talk Noise. ; Linearity - Nonlinearity Concepts. Physical Nonlinearities. Volterra Series. Single HBT Amplifier Linearity. Cascode LNA Linearity. Temperature Effects - The Impact of Temperature on Bipolar Transistors. Cryogenic Operation of SiGe HBTs. Optimization of SiGe HBTs for 77 K. Helium Temperature Operation. Non-Equilibrium Base Transport. High-Temperature Operation.; Other Device Design Issues -Design of p-n-p SiGe HBTs. Arbitrary Band Alignments. Ge-Induced Collector-Base Field Effects. ; Radiation Tolerance - Radiation Concepts and Damage Mechanisms. The Effects of Radiation on SiGe HBTs. Technology Scaling Issues. Circuit-level Tolerance. Single Event Upset. ; Device Simulation - Semiconductor Equations. Application Issues. Probing Internal Device Operation. Future Directions - Technology Trends. Performance Limits.; Properties of Silicon and Germanium. ; About the Authors.;
  • John D. Cressler John D. Cressler is Professor of electrical and computer engineering at The Georgia Institute of Technology . Professor Cressler received his Ph.D. in applied physics from Columbia University.
  • Guofu Niu Guofu Niu is Associate Professor of electrical and computer engineering at Auburn University. He received his Ph.D. in electrical engineering from Fudan University, in Shanghai, China.
Newsletter Signup

Permissions


© 2018 Artech House