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Artech House USA
Spin Transfer Torque Based Devices, Circuits, and Memory

Spin Transfer Torque Based Devices, Circuits, and Memory

Pages: 302
ISBN: 9781630810917

Print Book $179.00 Qty:
eBook $179.00 Qty:
This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A. The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing.
Introduction to Magnetic Memories and Spin Transfer Torque; Magnetic Tunnel Junctions (MTJs), Spin Transfer Torque Magneto-resistive Random Access Memories; Hybrid MTJ-CMOS Digital Circuits; Non-Volatile Computing with STT MRAMs; Spin Transfer Torque Based All Spin Logic (ASL); Non-Volatile Computing with All Spin Information Processing.
  • Brajesh Kumar Kaushik Brajesh Kumar Kaushik is an associate professor for the Indian Institute of Technology-Roorkee, India. He received his Ph.D. from Indian Institue of Technology Roorkee, India. He is Editor–in–Chief of various journals in the field of VLSI and microelectronics.
  • Shivam Verma Shivam Verma received his B.E. in Electronics and Communication Engineering from Shri Vaishnav Institute of Technology and Science, Indore, India and his M.Tech. degree in microelectronics from Indian Institute of Technology, Varanasi, India. He is currently pursuing his Ph.D. from the Indian Institute of Technology Roorkee, India.
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