By (author)s: Timo Rahkonen, Joel Vuolevi

Copyright: 2003
Pages: 272
ISBN: 9781580535397

Our Price: $108.00
Our Price: $102.00

Here is a thorough treatment of distortion in RF power amplifiers. This unique resource offers expert guidance in designing easily linearizable systems that have low memory effects. It offers you a detailed understanding of how the matching impedances of a power amplifier and other RF circuits can be tuned to minimize overall distortion. What's more, you see how to build models that can be used for distortion simulations. A new measurement methodology enables you to gauge the amplitude and phase of distortion components and recognize memory effects. The book explains that by killing memory effects, it is possible to use simple linearizers, such as analog predistortion, and still achieve sufficient performance. You learn a distortion analysis technique that allows you to repeat the analysis with other amplifier structures. Including over 120 equations and more than 110 illustrations, this practical reference provides you with the assistance you need to create amplifiers suitable for linear transmitters, and offers you new views of semiconductor modeling.
Table Of Contents
Introduction - Historical Perspective. The Approach. Main Contents of the Book. Outline of the Book. ; Some Circuit Theory and Terminology - Classification of Electrical Systems. Analyzing Linear Systems. Memoryless Spectral Regeneration. Signal Bandwidth Dependent Nonlinear Effects. Analysis of Nonlinear Systems. ; Memory Effects in RF Power Amplifiers - Efficiency. Linearization. Electrical Memory Effects. Thermal Memory Effects. Amplitude Domain Effects. ; The Volterra Model - Nonlinear Simulation Models. The BJT/HBT Model. Calculating IM3 Responses. MESFET Model and Analysis. ; Simulating and Measuring Memory Effects - Simulating Memory Effects. Measuring the Memory Effects. Memory Effects and Linearisation. ; Cancellation of Memory Effects - Envelope Filtering. Impedance Optimization. Envelope Injection. ; Characterization of the Volterra Model - Calibration. Pulsed S-parameter Measurements. De-embed the Effects of the Package. Calculation of Small-Signal Parameters. Fitting Polynomial Models. Extracted Nonlinearity Coefficient of a MESFET. Extracted Nonlinearity Coefficient of a 30W LDMOS. DC Characterization. ; Appendix A: Volterra Analysis in More Detail.; Appendix B: IM3 Equations for Cascaded 2nd-Order Distortion Mechanisms.; Appendix C: The Truncation Error.


  • Timo Rahkonen Timo Rahkonen is a professor in the department of electrical engineering, University of Oulu, where he received his Engineering Diploma and Doctor of Technology degree.
  • Joel Vuolevi Joel Vuolevi is a linear power amplifier designer at RF Integrated Corporation, Irvine, California. He received his M.Sc. and Ph.D. in electronics from the University of Oulu, Finland.