By (author): Matthias Rudolph

Copyright: 2006
Pages: 372
ISBN: 9781580531443

Our Price: $126.00

Master powerful GaAs HBT modeling techniques with this comprehensive, one-stop resource. The book helps you gain total command of heterojunction bipolar transistor (HBT) models by offering insight into compact HBT modeling strategies from a circuit-designers point of view. It provides you with detailed coverage of state-of-the-art tools that help you select the best model to meet specific design requirements, know what physical effects to expect, and modify or create new models to optimize simulation accuracy and to enhance the chance of achieving single-pass success in circuit design. Supported by over 500 equations and 130 illustrations, the book offers full documentation and guidance to deploy HBT models ranging from Gummel-Poon and VBIC, to UCSD, Agilent, and FBH models. Small-signal, large-signal and noise modeling, and measurement and parameter extraction strategies are discussed in detail with regard to the respective models, and expert commentary at every step provides real-world insight in explaining, for example, why a model doesn't yield the expected results or how to modify an existing model properly. Emphasizing how toĆ¹ procedures without getting bogged down in device physics, this indispensable book puts the full power of active device modeling and circuit simulation at your command.
Table Of Contents
Introduction Types of Models for Circuit Simulation. Preconditions for Model Development and Use. The Model as a Nonlinear Circuit. Two Model Restrictions in Circuit Simulators.; Compact Modeling Concepts Consistency of Large- and Small-Signal Model. Numerical Considerations. Dispersion. Calculating Self-Heating with a Circuit Simulator. Statistical Modeling.; HBT Physics and Technology Emitter-Base Junction. Base Transport. Base-Collector Junction. HBT Technology.; Modeling of HBTs The Equivalent Circuit, Basic Electro-Thermal Properties of HBTs. The Gummel-Poon Charge-Control Relation. Constant Time Delay. Bias-Dependent Time Delay. Thermal Instabilities. ; Noise Modeling Physical Noise Sources. Noise Sources at Large-Signal Excitation. Noise Calculation with Correlation Matrices. HBT Noise Model (Shot Noise, Thermal Noise, Complete White Noise Model, 1/F Noise).; HBT Model Reference SPICE Gummel-Poon Model. VBIC Model. UCSD HBT Model. Agilent HBT Model. FBH HBT Model.; Measurements and Parameter Extraction Numerical Considerations. Deembedding Techniques. Thermal Resistance and Time-Constants. Small-Signal Intrinsic HBT Parameters. Temperature-Dependent Large-Signal Model Parameters. Noise Model Parameters.; Summary.;


  • Matthias Rudolph Matthias Rudolph is a senior scientist at the Ferdinand-Braun-Institut fur Hochstfrequenztechnik (FBH) in Berlin, Germany, where he is responsible for the characterization and modeling of FETs and HBTs for circuit design, and for the design of MMICs. He has written 13 journal articles and 29 conference papers on topics in the field. He received his Dr.-Ing in electrical engineering from the Darmstadt University of Technology.