By (author): Peter V. Wright

Copyright: 2025
Pages: 800
ISBN: 9781685690892

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Description

RF Passive Network Design and Synthesis for Mobile Communications, Volume 1, provides a comprehensive design reference for microwave and RF engineers, bridging a critical gap in the literature with detailed, closed-form analytic design equations for passive network components used in mobile RF front-end design. Distilling decades of experience from RF veteran Peter Wright, this guide focuses on real-world applicability, emphasizes intuitive design tradeoffs and powerful parametric modeling techniques. These methods allow engineers to explore innovative architectures and optimize performance before investing time in complex EM simulation.

 

Gain an understanding of unique network topologies, with unmatched detail in evaluating high-performance RF components such as couplers, combiners, splitters, and passive matching networks. Leveraging widely accessible tools like Excel, its analytic approach enables fast iteration and provides deep insight into the behavior of RF circuits. With over 650 illustrations, 750 equations, and extensive practical commentary, the book teaches how to model parasitics, design efficient lumped-element networks, and synthesize components that meet demanding performance targets across real-world operating conditions.

 

This is an indispensable reference for circuit designers, microwave engineers, and RF engineers working with mobile communications modules, power amplifiers, and integrated passive networks. The book offers foundational theory and actionable strategies that solve today’s toughest RF challenges, such as designing compact PA modules and developing next-gen mobile architectures. It helps professionals' model parasitics, synthesize components, and optimize performance, saving significant time and resources in the design process.

Table Of Contents

Chapter 1 [ABCD] Parameters – Key Relationships
1.1 Some useful [ABCD] relationships
1.2 Common two-port network [M] parameters
1.3 Interconnection of two [ABCD] matrices
1.4 Modified matrix coefficients with ground impedance

 

Chapter 2 S-Parameters – Key Relationships
2.1 Some useful S-parameter relationships
2.2 Changing port normalisation impedances
2.3 Some useful two-port S-parameter relationships
2.4 Common two-port network S-parameters
2.5 Coupled inductors multi-port S-parameters
2.6 Interconnection of two two-port S-parameter networks
2.7 S-Parameter reduction of a terminated three-port to a two-port network
2.8 S-Parameter reduction of a terminated four-port to a three-port network
2.9 Useful Three-Port Formulae

 

Chapter 3 Y- & Z-Parameters – Key Relationships
3.1 Y-parameters
3.2 Some useful two-port Y-parameter relationships
3.3 Common two-port network Y-parameters
3.4 Z-Parameters
3.5 Some useful two-port Z-parameter relationships
3.6 Common two-port network Z-parameters

 

Chapter 4 Power Relationships
4.1 Fundamental power relations
4.2 [ABCD] power relations
4.3 Two-port S-parameter power relations
4.4 Two-port Y-parameter power relations
4.5 Two-port Z-parameter power relations
4.6 Some useful power relationships
4.7 Maximum Available Gain – Optimum Conjugate Matching of a Passive Two-Port

 

Chapter 5 Lumped-Element Basics
5.1 Parametric Model Extraction
5.2 Capacitor lumped-element models
5.3 Inductor lumped-element models
5.4 Quadratic interpolation for dY/dω and dZ/dω
5.5 Integration of RF inductors into compact module design
5.6 Summary

 

Chapter 6 Efficient Analytic Optimisation Approach

 

Chapter 7 Excel®, a Powerful Interactive RF Design Tool
7.1 Visualisations in Excel®
7.2 Complex expressions in Excel®
7.3 Use of Macros in Excel®

 

Chapter 8 LC Resonator Basics
8.1 Formulae for equivalency between LC-series and -parallel resonators
8.2 Design of LC resonators for passband filtering
8.3 Design of LC resonators for stopband rejection
8.4 Design of LC-series resonators with desired in-band capacitance and a high-side resonance
8.5 Design of LC-series resonators with desired in-band inductance and a low-side resonance
8.6 Design of LC-parallel resonators with desired in-band inductance and a high-side resonance
8.7 Design of LC-parallel resonators with desired in-band capacitance and a low-side resonance
8.8 Practical bandpass filter design
8.9 Novel Resonator Pairing for Bandpass Shaping
8.10 Novel LC-series resonator pairing for passband-type response
8.11 Novel LC-parallel resonator pairing for passband-type response

 

Chapter 9 Fundamentals of Amplifier Output Matching
9.1 Passband harmonic susceptance compensated uniquely by bias inductor
9.2 Passband harmonic susceptance compensated by bias inductor and matching network

 

Chapter 10 Basic RF Power Amplifier Bias and Harmonic Trap Networks
10.1 PA shunting inductance and single harmonic trap
10.2 PA shunting inductance and dual harmonic traps
10.3 PA shunting inductance and dual coupled harmonic traps
10.4 Differential PA shunting inductances and harmonic traps
10.5 Differential PA shunting inductances and coupled harmonic traps
10.6 Differential PA shunting inductances and coupled bias and harmonic traps
10.7 All-pass bridge-T low-pass differential network

 

Chapter 11 LC Single-Ended Matching Networks Overview
11.1 Basic two-element matches
11.2 Basic two-element matching networks characteristics
11.3 Three-element network dependency options
11.4 π-network design
11.5 T-network design
11.6 π- and T-network characteristics
11.7 Two-element single-ended matching networks
11.8 Dual-Π Single-Ended PA Matching

 

Chapter 12 Coupled-Inductors Single-Ended PA Matching
12.1 Terminology: Coupled inductors versus transformer
12.2 Basic single-ended coupled-inductors design
12.3 Single-ended coupled-inductors with interwinding capacitance analysis approach
12.4 Low-pass π-network with auto-transformer action
12.5 High-pass T-network with auto-transformer action

 

Chapter 13 Considerations of Single-Phase versus Multi-phase Power Amplifiers
13.1 Considerations of single-ended versus differential PA architectures

 

Chapter 14 Classic Coupled-Inductors Matching for Differential PAs
14.1 Basic differential coupled-inductors design
14.2 Differential coupled inductors with interwinding capacitance

 

Chapter 15 Lattice Splitter/combiner
15.1 Generalised lattice splitter/combiner design basics
15.2 Generalised lattice design examples
15.3 Development of six-element lattice coupler

Author

  • Peter V. Wright

    graduated with an engineering degree from Cambridge University, UK. and began work as a microwave engineer for Marconi Communications, Chelmsford, UK. Subsequently, he took up an engineering position with Microwave Associates, Burlington, MA., before entering the PhD program in Electrical Sciences Department at MIT. His thesis work was in the area microwave, acoustics, and optical component design and modelling. Working under Professor Haus, he pioneered the application of coupling-of-modes theory (COM) to the design of surface acoustic wave (SAW) devices.

     

    After graduating from MIT, he became a staff member at Lincoln Laboratories, Bedford, MA, where he worked on superconducting signal processing circuits, and acousto-optic spectrum analyzers. Anxious to apply his COM theory to the design of practical SAW devices, he joined RF Monolithics in Dallas, TX, where he wrote most of the software for designing the company’s wide range of SAW resonators and filters. As an outcome of this work, he received multiple patents for numerous innovative architectures. He was Technical Program Chair of the 2000 IEEE Ultrasonics Symposium in Puerto Rico.

     

    Dr. Wright also worked in the acoustic field for Schlumberger in Clamart, France. There, he created an innovative acoustic signal processing algorithm to rapidly process logs for evaluating image cement integrity on the outside of a bore-hole casing. This algorithm was widely employed by the company in its tools used in the oil industry.

     

    Returning to his roots in the field of microwave design, he joined Thomson Microsonics in Sophia-Antipolis, France, which manufactured RF cellphone modules. Continuing in that field he joined TriQuint Semiconductor, later Qorvo in Hillsboro, OR, where he worked for eighteen years. During that time, he expanded on the device modelling capabilities he had previously developed and applied them predominantly to cellphone power amplifier RF modules. These techniques pointed the way to many innovative and advantageous device architectures, many of which are described in the two books of this series.

     

    The author was awarded around fifty issued patents and is currently retired in Cascais, Portugal. There he enjoys writing historical and science fiction novels. He is also an avid gardener.