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Artech House USA
Electrical and Thermal Characterization of MESFETs HEMTs and HBTs

Electrical and Thermal Characterization of MESFETs HEMTs and HBTs

By (author): Robert Anholt
Copyright: 1994
Pages: 310
ISBN: 9780890067499

Artech House is pleased to offer you this title in a special In-Print-Forever® ( IPF® ) hardbound edition. This book is not available from inventory but can be printed at your request and delivered within 2-4 weeks of receipt of order. Please note that because IPF® books are printed on demand, returns cannot be accepted.


Hardback $64.00 Qty:
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Physical Modeling of III-V Semiconductor Devices. How to Measure Temperature-dependent Equivalent Circuits. Self-heating in Transistors. GaAs MESFET Equivalent Circuits (Room Temperature). Temperature-dependent MESFET Equivalent Circuits. HEMT Equivalent Circuits (Room Temperature). Temperature-dependent HEMT Equivalent Circuits. Gate Currents in MESFETs and HEMTs. Heterojunction Bipolar Transistors. Circuit Modeling.
  • Robert Anholt
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