All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance.
Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
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Introduction; Transistor Concepts; Classification of Transistor Models; Classical Shockley Model and Enhanced Modifications; Extrinsic Transistor DC Network; Estimation of FET Model Element Values; Transistor Model Complexity; Reliable Estimates of Model Parameters from Low-Frequency; Small-Signal Measurement Techniques; Uncertainties in the Device Modeling Process; Optimization Methods for Model Parameter Extraction; Extraction Methods; All-At-Once Model Parameter Extraction; Decomposition-Based Model Parameter Extraction; Bidirectional Search Method; Pure Analytical Model Parameter Extraction; Analytical Model Parameter Extraction Using Rational Functions; Repetitive Random Optimization with Adaptive Search Space; Frequency Scanning for Bias-Dependence Analysis of Series Resistances; Model Parameter Extraction with Measurement-Correlated Parameter Starting Values; Basics of Nonlinear FET Modeling; Nonlinear Dispersive FET Device Model; Large-Signal Measurement Techniques for Device; Standard FET Models—Capabilities and Limitations; Developed Advanced Large-Signal Device Model Verification; Appendices.
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Gunter Kompa
Gunter Kompa is the High Frequency Engineering Chair at the University of Kassel, Germany. He holds both a Dipl.-Ing. and Dr.-Ing degree in electrical engineering from the Institute of High Frequency Engineering at the Technical University of Aachen, Germany.